Vibration analysis and pull-in instability behavior in a multiwalled piezoelectric nanosensor with fluid flow conveyance

• Sayyid H. Hashemi Kachapi

Beilstein J. Nanotechnol. 2020, 11, 1072–1081, doi:10.3762/bjnano.11.92

• Sayyid H. Hashemi Kachapi Department of Mechanical Engineering, Babol Noshirvani University of Technology, P.O. Box 484, Shariati Street, Babol, Mazandaran 47148-71167, Iran 10.3762/bjnano.11.92 Abstract In this work, surface/interface effects for pull-in voltage and viscous fluid velocity

• [18][20]. The value of the mid-surface radius for different PENS are presented as following: for single-walled PENS (SWPENS): R = Rout; for double-walled PENS (DWPENS): R1 = Rin, R2 = Rout; and for triple-walled PENS (TWPENS): R1 = Rin, R2 = Rmid, R3 = Rout. Surface/interface effects on dimensionless

• case of higher surface/interface density (case 1), the inertia of the shell is increased and its stiffness is reduced, which leads to a decreased DNF compared to the case without surface/interface effects. Also, with decreasing surface/interface density (case 2), the inertia of the system is increased

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

• Noel Kennedy,
• Ray Duffy,
• Luke Eaton,
• Dan O’Connell,
• Scott Monaghan,
• Shane Garvey,
• James Connolly,
• Chris Hatem,
• Justin D. Holmes and
• Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

• substrates [19]. A previous work by Mastromatteo et al. [20] examining P implantation of silicon nanocrystals embedded into SiO2 attributed a similar P peak to interface effects. It is unclear as to whether the silicon to insulator interface in these SOI substrates will behave in a manner similar to that of

Recent highlights in nanoscale and mesoscale friction

• Andrea Vanossi,
• Dirk Dietzel,
• Andre Schirmeisen,
• Ernst Meyer,
• Rémy Pawlak,
• Thilo Glatzel,
• Marcin Kisiel,
• Shigeki Kawai and
• Nicola Manini

Beilstein J. Nanotechnol. 2018, 9, 1995–2014, doi:10.3762/bjnano.9.190

• areas of the analyzed systems in these works spanned several orders of magnitude ranging from a few square nanometers for GNRs [58] to almost the square micrometer range for sheared graphite stacks [49]. Once the exact tribological scenario is identified, further interface effects can be derived from

Invariance of molecular charge transport upon changes of extended molecule size and several related issues

• Ioan Bâldea

Beilstein J. Nanotechnol. 2016, 7, 418–431, doi:10.3762/bjnano.7.37

• only checked the fact that the current at the “left” and “right” ends of the molecule are equal [1][14][15]. Except (if at all) for simpler interface effects (e.g., those accounted for through ohmic contact resistances), conduction through macroscopic solids contacted to electrodes is determined by the

Hybrid spin-crossover nanostructures

• Carlos M. Quintero,
• Gautier Félix,
• Iurii Suleimanov,
• José Sánchez Costa,
• Gábor Molnár,
• Lionel Salmon,
• William Nicolazzi and
• Azzedine Bousseksou

Beilstein J. Nanotechnol. 2014, 5, 2230–2239, doi:10.3762/bjnano.5.232

• has a major impact on the spin-crossover behavior. Thus, the SCO phenomenon can be controlled by clever engineering of the nanoparticle interface. To this regard, theoretical studies can be very useful to predict the various interface effects. In general, the presence of the surface leads to new

Properties of plasmonic arrays produced by pulsed-laser nanostructuring of thin Au films

• Katarzyna Grochowska,
• Katarzyna Siuzdak,
• Peter A. Atanasov,
• Carla Bittencourt,
• Anna Dikovska,
• Nikolay N. Nedyalkov and
• Gerard Śliwiński

Beilstein J. Nanotechnol. 2014, 5, 2102–2112, doi:10.3762/bjnano.5.219

• additive. Thus, the linewidth consists of the sum of the contributions from the homogeneous and radiative widths and those originating from bulk, surface and interface effects [41]: In this sum the three latter terms can be neglected, being much smaller than the prominent radiative and homogeneous

Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy

• Federico Baiutti,
• Georg Christiani and
• Gennady Logvenov

Beilstein J. Nanotechnol. 2014, 5, 596–602, doi:10.3762/bjnano.5.70

• structural defects, with the aim of tailoring their functional properties by precise defects control. Keywords: artificial superlattices; complex oxides; defect chemistry; interface effects; molecular beam epitaxy; Introduction The progress in the synthesis of layered complex oxide compounds with high

• interface effects occurring in oxides heterostructures [2]. In the last decades, their study has revealed the presence of unexpected properties, such as superconductivity [3][4], metallicity [5][6] and magnetism [7], which cannot be ascribed to any of the constituent phases taken singularly. Many, sometimes

• contradictory, mechanisms have been proposed in order to explain interface effects, including cationic intermixing [8], electronic reconstruction [9][10] and extrinsic doping [11][12], witnessing the complexity of the phenomena. In order to achieve further progress in the study of complex oxides, there is an

Quantum size effects in TiO₂ thin films grown by atomic layer deposition

• Massimo Tallarida,
• Chittaranjan Das and
• Dieter Schmeisser

Beilstein J. Nanotechnol. 2014, 5, 77–82, doi:10.3762/bjnano.5.7

• nm thickness and allows for the investigation of similar quantum size effects in TiO2 thin films. In this case interface effects, as those observed in TiO2 ALD films grown on SnO2:F [11], could also become important. We performed the characterization of ALD films by using mostly X-ray absorption

P-wave Cooper pair splitting

• Henning Soller and
• Andreas Komnik

Beilstein J. Nanotechnol. 2012, 3, 493–500, doi:10.3762/bjnano.3.56

• moments) of P(q). We model the superconductor–ferromagnet beam splitter as two ferromagnets F1 and F2 that are tunnel-coupled to a resonant level, which is the simplest model of a quantum dot. The superconductor is also coupled to the resonant level via HT1 and HT2, which takes into account the interface

• effects. The result is the Hamiltonian where represents the resonant level. Throughout the rest of this exposition we use units in which e = = kB = 1 and restrict ourselves to a quantum dot on resonance Δd = 0. Ferromagnetic electrodes are described in the language of electron field operators Ψk,α,σ

Review and outlook: from single nanoparticles to self-assembled monolayers and granular GMR sensors

• Alexander Weddemann,
• Inga Ennen,
• Anna Regtmeier,
• Camelia Albon,
• Annalena Wolff,
• Katrin Eckstädt,
• Nadine Mill,
• Michael K.-H. Peter,
• Jochen Mattay,
• Carolin Plattner,
• Norbert Sewald and
• Andreas Hütten

Beilstein J. Nanotechnol. 2010, 1, 75–93, doi:10.3762/bjnano.1.10

• , interface effects gain importance until below a critical diameter dc, the formation of domains is energetically less favorable. For spherical particles, this critical diameter dc depends on various material properties such as the exchange constant A, the effective anisotropy constant Keff and the saturation